Growth Systems

Compact growth and analysis facility installed at the Japanese photon factory at Tskuba city. The analysis chamber is connected to an x-ray beam line and is fitted with a five axis manipulator for RVLEED and fluorescent EXAFS studies using a solid state multi-detector array with a UHV chamber. This detector is also used in conjunction with a high resolution six axis goniometer for fluorescent SEXAFS. Surface x-ray diffraction experiments use a channelplate detector which rotates on the six axis goniometer. Cassettes of samples are entered through the loadlock and into the transfer, preparation and storage chamber. The deposition chamber is fitted with an e-gun and two K-cells to allow epitaxial growth of semiconductors.

Thin Film Growth

True UHV, 5 x 10-11 mbar, high Tc superconductor thin film growth facility supplied to the University of Delft featuring two 40cc e-guns, three x 40cc PBN K-cells and oxygen resistant sample heating. The system is equipped with quadrupole rate controllers and a five specimen cassette entry lock system. It has since been upgraded to include a surface analysis facility.

Sample Growth

Substrate manipulators for large samples, (50-150 mm diameter), available with or without continuous sample rotation.

The tantalum foil radiant elements are capable of heating wafers up to 850 ºC without a sample shutter, and 1200 ºC with a shutter. Also available with Z shift, and oxygen resistant versions.